Absence of Fermi-level pinning at cleaved nonpolar InN surfaces.
نویسندگان
چکیده
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well above the conduction band edge, leading to strong surface band bending and electron accumulation. Using cross-sectional scanning photoelectron microscopy and spectroscopy, we show definitive evidence of unpinned Fermi level for in situ cleaved a-plane InN surfaces. To confirm the presence or absence of band bending, the surface Fermi level relative to the valence band edge was precisely measured by using both the Fermi edge of Au reference sample and the core level of ultrathin Au overlayer. It is confirmed that flat surface bands only occur at cleaved nonpolar surfaces, consistent with the recent theoretical predictions.
منابع مشابه
Fermi-level pinning can determine polarity in semiconductor nanorods
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi-level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potenti...
متن کاملAbsence of fermi level pinning at metal-lnxGa1_xAs (100) interfaces
Soft x-ray photoemission spectroscopy measurements of clean, ordered In. Ga l _ x As (100) surfaces with Au, In, Ge, or Al overlayers reveal an unpinned Fermi level across the entire In alloy series. The Fermi level stabilization energies depend strongly on the particular metal and differ dramatically from those of air-exposed interfaces. This wide range of Schottky barrier height for III-V com...
متن کاملScanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces
investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces Wilhelm Melitz, Jian Shen, Sangyeob Lee, Joon Sung Lee, Andrew C. Kummel, Ravi Droopad, and Edward T. Yu Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, Cal...
متن کاملGaN and InN nanowires grown by MBE: a comparison
Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. F...
متن کاملElectronic structure of pyridine-based SAMs on flat Au(111) surfaces: extended charge rearrangements and Fermi level pinning.
Density functional theory calculations are used to investigate the electronic structure of pyridine-based self-assembled monolayers (SAMs) on an Au(111) surface. We find that, when using pyridine docking groups, the bonding-induced charge rearrangements are frequently found to extend well onto the molecular backbone. This is in contrast to previous observations for the chemisorption of other SA...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 101 10 شماره
صفحات -
تاریخ انتشار 2008